![Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits - ScienceDirect Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0167931713006874-gr1.jpg)
Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits - ScienceDirect
![Figure 3 from A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT | Semantic Scholar Figure 3 from A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/e8c43c133dbfa8f85ac1d13d4ffcea1e0610de32/2-Figure3-1.png)
Figure 3 from A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT | Semantic Scholar
![Figure 1 from A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives | Semantic Scholar Figure 1 from A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/75a5c39a9dcca96f5fde6d7fe99c368615a6c229/2-Figure1-1.png)
Figure 1 from A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives | Semantic Scholar
![Figure 5 from Development of a Through-Silicon Via (TSV) Process Module for Multi-project Wafer SiGe BiCMOS and Silicon Interposer | Semantic Scholar Figure 5 from Development of a Through-Silicon Via (TSV) Process Module for Multi-project Wafer SiGe BiCMOS and Silicon Interposer | Semantic Scholar](https://ai2-s2-public.s3.amazonaws.com/figures/2017-08-08/8e715ad9c37ebc03631b56a726a603dc0fbdd58f/2-Figure5-1.png)
Figure 5 from Development of a Through-Silicon Via (TSV) Process Module for Multi-project Wafer SiGe BiCMOS and Silicon Interposer | Semantic Scholar
![Scheme of the cross-section of a planarized BiCMOS chip ready for the... | Download Scientific Diagram Scheme of the cross-section of a planarized BiCMOS chip ready for the... | Download Scientific Diagram](https://www.researchgate.net/publication/270879680/figure/fig2/AS:282237489696769@1444302069055/Scheme-of-the-cross-section-of-a-planarized-BiCMOS-chip-ready-for-the-hetero-integration.png)
Scheme of the cross-section of a planarized BiCMOS chip ready for the... | Download Scientific Diagram
![SEM cross-sectional view of 0.18 μm based SiGe HBT. Cross-section of... | Download Scientific Diagram SEM cross-sectional view of 0.18 μm based SiGe HBT. Cross-section of... | Download Scientific Diagram](https://www.researchgate.net/publication/260720439/figure/fig16/AS:667090134503439@1536058090779/SEM-cross-sectional-view-of-018-mm-based-SiGe-HBT-Cross-section-of-sample-was-slightly.jpg)
SEM cross-sectional view of 0.18 μm based SiGe HBT. Cross-section of... | Download Scientific Diagram
![A schematic cross-section of the SiGe BiCMOS SBC18H3 process where the... | Download Scientific Diagram A schematic cross-section of the SiGe BiCMOS SBC18H3 process where the... | Download Scientific Diagram](https://www.researchgate.net/profile/Dimitrios-Baltimas/publication/355091992/figure/fig1/AS:1076537902280745@1633678045407/A-schematic-cross-section-of-the-SiGe-BiCMOS-SBC18H3-process-where-the-PCM-RF-switch-is_Q640.jpg)